2SB681 PNP Transistor

INCHANGE

Description

isc Silicon PNP Power Transistor .
High Current Capability. Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min. Minimum Lot-to-Lot variations for robust device pe.

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Datasheet Specifications

Part number: 2SB681
Manufacturer: INCHANGE
File Size: 204.10 KB
Datasheet: 2SB681-INCHANGE.pdf
Description: PNP Transistor

Applications

* For AF power amplifier use.
* Recommended for use in output stage of 80 watts power amplifier . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -6 V IC Collector

2SB681 Distributors

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2SB681 PNP Transistor INCHANGE

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