2SB681 Datasheet - INCHANGE

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2SB681 PNP Transistor

isc Silicon PNP Power Transistor .
High Current Capability. Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min. Minimum Lot-to-Lot variations for robust device pe.

2SB681-INCHANGE.pdf

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Datasheet Details

Part number:

2SB681

Manufacturer:

INCHANGE

File Size:

204.10 KB

Description:

PNP Transistor

Applications

* For AF power amplifier use.
* Recommended for use in output stage of 80 watts power amplifier . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -6 V IC Collector

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2SB681 PNP Transistor INCHANGE

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