2SB683 Datasheet - INCHANGE

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2SB683 PNP Transistor

isc Silicon PNP Power Transistor 2SB683 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO = -100V(Min). High Power Dissipation. Wide Area of Safe Operation. Minimum Lot-to-Lot.

2SB683-INCHANGE.pdf

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Datasheet Details

Part number:

2SB683

Manufacturer:

INCHANGE

File Size:

214.56 KB

Description:

PNP Transistor

Applications

* Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous Total Power Dissipation

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2SB683 PNP Transistor INCHANGE

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