Part number:
2SB682
Manufacturer:
INCHANGE
File Size:
214.36 KB
Description:
Pnp transistor.
2SB682
INCHANGE
214.36 KB
Pnp transistor.
📁 Related Datasheet
2SB681 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
DESCRIPTION ·High Current Capability ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -150V(Min.) ·Minimum Lot-to-L.
2SB681 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SB681
DESCRIPTION ·With TO-3 package ·High power d.
2SB683 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
2SB683
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = -100V(Min) ·High Power Dissipation ·Wide Area.
2SB686 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
2SB686
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min) ·Good Linearity of hFE ·Complement .
2SB686 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SB686
DESCRIPTION ·With TO-3P(I) package ·Compleme.
2SB686 - SILICON PNP TRANSISTOR
(Toshiba)
:
SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS)
2SB686
POWER AMPLIFIER APPLICATIONS.
15.9MAX.
Unit in mm
03.2±Q .2
FEATURES • Complementary to 2.
2SB688 - Silicon PNP Power Transistors
(Savantic)
SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB688
DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SD718
APP.
2SB688 - Silicon PNP Power Transistor
(Inchange Semiconductor)
isc Silicon PNP Power Transistor
2SB688
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min) ·Good Linearity of hFE ·Complement .
