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2SB682 Datasheet - INCHANGE

2SB682 PNP Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO = -100V(Min) *High Power Dissipation *Wide Area of Safe Operation *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for low frequency power amplifier applications. ABSOLUTE.

2SB682-INCHANGE.pdf

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Datasheet Details

Part number:

2SB682

Manufacturer:

INCHANGE

File Size:

214.36 KB

Description:

Pnp transistor.

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