2SB682 PNP Transistor

INCHANGE

Description

isc Silicon PNP Power Transistor 2SB682 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO = -100V(Min). High Power Dissipation. Wide Area of Safe Operation. Minimum Lot-to-Lot.

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Datasheet Specifications

Part number: 2SB682
Manufacturer: INCHANGE
File Size: 214.36 KB
Datasheet: 2SB682-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous Total Power Dissipation

2SB682 Distributors

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2SB682 PNP Transistor INCHANGE

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