2SB686 PNP Transistor

INCHANGE

Description

isc Silicon PNP Power Transistor 2SB686 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min). Good Linearity of hFE. Complement to Type 2SD716. Minimum Lot-to-Lot var.

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Datasheet Specifications

Part number: 2SB686
Manufacturer: INCHANGE
File Size: 215.57 KB
Datasheet: 2SB686-INCHANGE.pdf
Description: PNP Transistor

Applications

* Power amplifier applications
* Recommend for 30~35W high-fidelity audio frequency amplifier output stage. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC

2SB686 Distributors

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2SB686 PNP Transistor INCHANGE

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