2SB686 Datasheet - INCHANGE

datasheet Preview Page 1 from Datasheet4u.com

2SB686 PNP Transistor

isc Silicon PNP Power Transistor 2SB686 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min). Good Linearity of hFE. Complement to Type 2SD716. Minimum Lot-to-Lot var.

2SB686-INCHANGE.pdf

2SB686 Datasheet Preview — Preview of 2SB686 PDF

Datasheet Details

Part number:

2SB686

Manufacturer:

INCHANGE

File Size:

215.57 KB

Description:

PNP Transistor

Applications

* Power amplifier applications
* Recommend for 30~35W high-fidelity audio frequency amplifier output stage. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC

2SB686 Distributors

📁 Related Datasheet

2SB688 2SB601 2SB605 2SB609 2SB616 2SB617

📌 All Tags

2SB686 PNP Transistor INCHANGE

INCHANGE 2SB686-like datasheet