2SB689 Datasheet - INCHANGE

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2SB689 PNP Transistor

isc Silicon PNP Power Transistor 2SB689 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO = -100V(Min). High Power Dissipation. Wide Area of Safe Operation. Minimum Lot-to-Lot.

2SB689-INCHANGE.pdf

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Datasheet Details

Part number:

2SB689

Manufacturer:

INCHANGE

File Size:

209.68 KB

Description:

PNP Transistor

Applications

* Designed for low frequency power amplifier and TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -4 V IC Collector Current-C

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2SB689 PNP Transistor INCHANGE

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