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2SB871 PNP Transistor

2SB871 Description

isc Silicon PNP Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -20V(Min). High Speed Switching. Low Collector Saturation Voltage : VCE(sat)= -0.

2SB871 Applications

* Designed for low voltage switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A ICM Collector Current-

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Datasheet Details

Part number
2SB871
Manufacturer
INCHANGE
File Size
212.96 KB
Datasheet
2SB871-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE 2SB871-like datasheet