2SB871 - PNP Transistor
*Collector-Emitter Breakdown Voltage- : V(BR)CEO= -20V(Min) *High Speed Switching *Low Collector Saturation Voltage : VCE(sat)= -0.6V(Max)@IC= -10A *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for low voltage switching
