2SB880 - PNP Transistor
*High DC Current Gain- : hFE = 2000(Min)@ IC= -2A *Wide Area of Safe Operation *Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -2A *Complement to Type 2SD1190 *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
