2SB880 PNP Transistor

INCHANGE

Description

isc Silicon PNP Darlington Power Transistor 2SB880 .
High DC Current Gain- : hFE = 2000(Min)@ IC= -2A. Wide Area of Safe Operation. Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.

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Datasheet Specifications

Part number: 2SB880
Manufacturer: INCHANGE
File Size: 210.25 KB
Datasheet: 2SB880-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulators applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -6 V IC Collector

2SB880 Distributors

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2SB880 PNP Transistor INCHANGE

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