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2SB885 PNP Transistor

2SB885 Description

isc Silicon PNP Darlington Power Transistor 2SB885 .
High DC Current Gain- : hFE = 1500(Min)@ IC= -2. Wide Area of Safe Operation. Low Collector-Emitter Saturation Voltage- : VCE(sat) = -.

2SB885 Applications

* Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulators applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -110 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -6 V IC Collecto

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Datasheet Details

Part number
2SB885
Manufacturer
INCHANGE
File Size
210.21 KB
Datasheet
2SB885-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE 2SB885-like datasheet