2SB885 Datasheet - INCHANGE

datasheet Preview Page 1 from Datasheet4u.com

2SB885 PNP Transistor

isc Silicon PNP Darlington Power Transistor 2SB885 .
High DC Current Gain- : hFE = 1500(Min)@ IC= -2. Wide Area of Safe Operation. Low Collector-Emitter Saturation Voltage- : VCE(sat) = -.

2SB885-INCHANGE.pdf

2SB885 Datasheet Preview — Preview of 2SB885 PDF

Datasheet Details

Part number:

2SB885

Manufacturer:

INCHANGE

File Size:

210.21 KB

Description:

PNP Transistor

Applications

* Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulators applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -110 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -6 V IC Collecto

2SB885 Distributors

📁 Related Datasheet

2SB880 2SB881 2SB882 2SB883 2SB884 2SB886

📌 All Tags

2SB885 PNP Transistor INCHANGE

INCHANGE 2SB885-like datasheet