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2SB885 Datasheet - INCHANGE

2SB885 PNP Transistor

*High DC Current Gain- : hFE = 1500(Min)@ IC= -2.5A *Wide Area of Safe Operation *Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -2.5A *Complement to Type 2SD1195 *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICAT.

2SB885-INCHANGE.pdf

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Datasheet Details

Part number:

2SB885

Manufacturer:

INCHANGE

File Size:

210.21 KB

Description:

Pnp transistor.

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