2SB886 PNP Transistor

INCHANGE

Description

isc Silicon PNP Darlington Power Transistor .
High DC Current Gain- : hFE = 1500(Min)@ IC= -4A. Wide Area of Safe Operation. Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.

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Datasheet Specifications

Part number: 2SB886
Manufacturer: INCHANGE
File Size: 210.58 KB
Datasheet: 2SB886-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulators applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -110 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -6 V IC Collect

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2SB886 PNP Transistor INCHANGE

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