2SB887 PNP Transistor

INCHANGE

Description

isc Silicon PNP Darlington Power Transistor 2SB887 .
High DC Current Gain- : hFE = 1500(Min)@ IC= -5A. Wide Area of Safe Operation. Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.

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Datasheet Specifications

Part number: 2SB887
Manufacturer: INCHANGE
File Size: 214.20 KB
Datasheet: 2SB887-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulators applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -110 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -6 V IC Collect

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2SB887 PNP Transistor INCHANGE

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