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2SB896 PNP Transistor

2SB896 Description

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB896 .
Collector-Emitter BreakdownVoltage- : V(BR)CEO= -40V(Min. Low Collector Saturation Voltage- : VCE(sat)= -0. High speed.

2SB896 Applications

* Designed for low voltage switching applications . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A ICM Collector Current-

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Datasheet Details

Part number
2SB896
Manufacturer
INCHANGE
File Size
184.54 KB
Datasheet
2SB896-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE 2SB896-like datasheet