2SC1507 - NPN Transistor
*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) *Low Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max) @IC= 50mA *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for use in line
