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2SC1507 - NPN Transistor

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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max) @IC= 50mA 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in line

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Datasheet Details

Part number 2SC1507
Manufacturer INCHANGE
File Size 183.11 KB
Description NPN Transistor
Datasheet download datasheet 2SC1507 Datasheet
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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1507 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max) @IC= 50mA ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in line-operated color TV chroma output Circuits and sound output circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 200 mA 15 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： www.
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