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2SC1509 - Silicon NPN Transistor

Datasheet Summary

Features

  • High collector-emitter voltage (Base open) VCEO 13.5±0.5 0.7.
  • +00..23.
  • Optimum for the driver stage of a low-frequency and 25 W to 30 0.7±0.1 W output amplifier.
  • Absolute Maximum Ratings Ta = 25°C / Parameter Symbol Rating Unit e ) Collector-base voltage (Emitter open) VCBO 80 V c type Collector-emitter voltage (Base open) VCEO 80 V n d ge. ed Emitter-base voltage (Collector open) VEBO 5 (3.2) V le sta ntinu Collector current IC 0.5 A a e cyc.

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Datasheet Details

Part number 2SC1509
Manufacturer Panasonic Semiconductor
File Size 251.78 KB
Description Silicon NPN Transistor
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Transistors 2SC1509 Silicon NPN epitaxial planar type For low-frequency driver amplification Complementary to 2SA0777 (2SA777) 5.9±0.2 Unit: mm 4.9±0.2 8.6±0.2 ■ Features • High collector-emitter voltage (Base open) VCEO 13.5±0.5 0.7–+00..23 • Optimum for the driver stage of a low-frequency and 25 W to 30 0.7±0.1 W output amplifier ■ Absolute Maximum Ratings Ta = 25°C / Parameter Symbol Rating Unit e ) Collector-base voltage (Emitter open) VCBO 80 V c type Collector-emitter voltage (Base open) VCEO 80 V n d ge. ed Emitter-base voltage (Collector open) VEBO 5 (3.2) V le sta ntinu Collector current IC 0.
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