2SC1567 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage : V(BR)CEO= 100V(Min). Good Linearity of hFE. Complement to Type 2SA794. Minimum Lot-to-Lot varia.

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Datasheet Specifications

Part number: 2SC1567
Manufacturer: INCHANGE
File Size: 191.87 KB
Datasheet: 2SC1567-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for low-frequency high power driver.
* Optimum for the driver stage of low-frequency and 40W to 100W output amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base

2SC1567 Distributors

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2SC1567 NPN Transistor INCHANGE

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