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2SC2307 NPN Transistor

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Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- V(BR)CEO= 400V(Min). High Switching Speed. Minimum Lot-to-Lot variations for robust device performan.

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Datasheet Specifications

Part number
2SC2307
Manufacturer
INCHANGE
File Size
192.85 KB
Datasheet
2SC2307-INCHANGE.pdf
Description
NPN Transistor

Applications

* Designed for switching regulator and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 12 A IB Bas

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NPN Transistor INCHANGE
INCHANGE 2SC2307-like datasheet