2SC2365 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V (Min). High Switching Speed. Minimum Lot-to-Lot variations for robust device perfor.

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Datasheet Specifications

Part number: 2SC2365
Manufacturer: INCHANGE
File Size: 185.17 KB
Datasheet: 2SC2365-INCHANGE.pdf
Description: NPN Transistor

Applications

* Power switching
* Power amplification
* Power driver ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 6 A ICM Collector Cur

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2SC2365 NPN Transistor INCHANGE

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