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2SC2527 NPN Transistor

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Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min). Fast Switching Speed. Minimum Lot-to-Lot variations for robust device perform.

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Datasheet Specifications

Part number
2SC2527
Manufacturer
INCHANGE
File Size
189.64 KB
Datasheet
2SC2527-INCHANGE.pdf
Description
NPN Transistor

Applications

* Switching regulator and high voltage switching applications.
* High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collec

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