Datasheet4U Logo Datasheet4U.com

2SC3090 NPN Transistor

2SC3090 Description

isc Silicon NPN Power Transistor .
High Breakdown Voltage- : V(BR)CBO= 800V(Min). Fast Switching Speed. Wide Area of Safe Operation. Minimum Lot-to-Lot variations for r.

2SC3090 Applications

* Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak

📥 Download Datasheet

Preview of 2SC3090 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2SC3090
Manufacturer
INCHANGE
File Size
198.71 KB
Datasheet
2SC3090-INCHANGE.pdf
Description
NPN Transistor

📁 Related Datasheet

  • 2SC3093 - NPN Triple Diffused Planar Silicon Transistor (ETC)
  • 2SC3094 - Silicon NPN Power Transistor (Inchange Semiconductor)
  • 2SC3097 - TRANSISTOR (GOOD-ARK)
  • 2SC3098 - Silicon NPN Epitaxial Planar Type Transistor (Toshiba Semiconductor)
  • 2SC3099 - Silicon NPN Epitaxial Planar Type Transistor (Toshiba Semiconductor)
  • 2SC3000 - NPN Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)
  • 2SC3001 - NPN EPITAXIAL PLANAR TYPE TRANSISTOR (Mitsubishi Electric Semiconductor)
  • 2SC3006 - Silicon NPN epitaxial planer type Transistor (Toshiba Semiconductor)

📌 All Tags

NPN Transistor INCHANGE
INCHANGE 2SC3090-like datasheet