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2SD1479 NPN Transistor

2SD1479 Description

isc Silicon NPN Power Transistor 2SD1479 .
High Breakdown Voltage- : VCBO= 1500V (Min). High Switching Speed. Minimum Lot-to-Lot variations for robust device performance and reliab.

2SD1479 Applications

* Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector-Emitter Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Cu

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Datasheet Details

Part number
2SD1479
Manufacturer
INCHANGE
File Size
208.28 KB
Datasheet
2SD1479-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD1479-like datasheet