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2SD1406 NPN Transistor

2SD1406 Description

isc Silicon NPN Power Transistor 2SD1406 .
Low Collector Saturation Voltage : VCE(sat)= 1. Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V (Min). Complement to.

2SD1406 Applications

* Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A IB Base Current-C

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Datasheet Details

Part number
2SD1406
Manufacturer
INCHANGE
File Size
211.89 KB
Datasheet
2SD1406-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD1406-like datasheet