2SD325 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor 2SD325 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 35V(Min). Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1. Com.

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Datasheet Specifications

Part number: 2SD325
Manufacturer: INCHANGE
File Size: 209.18 KB
Datasheet: 2SD325-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for low frequency power amplifier applications.
* Recommended for 5 watts AF power amplifier output use. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 35 V VEBO Emitter-Base Voltage 5 V

2SD325 Distributors

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2SD325 NPN Transistor INCHANGE

INCHANGE 2SD325-like datasheet