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2SD334 NPN Transistor

2SD334 Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min). Wide Area of Safe Operation. Minimum Lot-to-Lot variations for robust device.

2SD334 Applications

* Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 6 A IB Base Current-Continuous P

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Datasheet Details

Part number
2SD334
Manufacturer
INCHANGE
File Size
202.29 KB
Datasheet
2SD334-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD334-like datasheet