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2SD334

NPN Transistor

2SD334 General Description


*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min)
*Wide Area of Safe Operation
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAME.

2SD334 Datasheet (202.29 KB)

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Datasheet Details

Part number:

2SD334

Manufacturer:

INCHANGE

File Size:

202.29 KB

Description:

Npn transistor.

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2SD334 NPN Transistor INCHANGE

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