2SD334 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min). Wide Area of Safe Operation. Minimum Lot-to-Lot variations for robust device.

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Datasheet Specifications

Part number: 2SD334
Manufacturer: INCHANGE
File Size: 202.29 KB
Datasheet: 2SD334-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 6 A IB Base Current-Continuous P

2SD334 Distributors

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2SD334 NPN Transistor INCHANGE

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