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2SD338 NPN Transistor

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Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD338 .
Collector-Emitter Breakdown Voltage- : V(BR) CEO= 70V(Min). Excellent Safe Operating Area. Low Collector-Emitter Saturation Voltage- : VC.

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Datasheet Specifications

Part number
2SD338
Manufacturer
INCHANGE
File Size
192.04 KB
Datasheet
2SD338-INCHANGE.pdf
Description
NPN Transistor

Applications

* Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 70 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 7 A ICM

2SD338 Distributors

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NPN Transistor INCHANGE
INCHANGE 2SD338-like datasheet