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2SD339

NPN Transistor

2SD339 General Description


*Collector-Emitter Breakdown Voltage- : V(BR) CEO= 90V(Min)
*Excellent Safe Operating Area
*Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC = 7.5A
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*Designed for u.

2SD339 Datasheet (192.48 KB)

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Datasheet Details

Part number:

2SD339

Manufacturer:

INCHANGE

File Size:

192.48 KB

Description:

Npn transistor.

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2SD339 NPN Transistor INCHANGE

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