2SD560 NPN Transistor

INCHANGE

Description

isc Silicon NPN Darlington Power Transistor 2SD560 .
Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min). High DC Current Gain : hFE= 2000(Min) @IC= 3. Low Saturation Voltage.

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Datasheet Specifications

Part number: 2SD560
Manufacturer: INCHANGE
File Size: 206.05 KB
Datasheet: 2SD560-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for low frequency power amplifiers and low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous

2SD560 Distributors

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2SD560 NPN Transistor INCHANGE

INCHANGE 2SD560-like datasheet