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2SD640 Datasheet - INCHANGE

2SD640 NPN Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V (Min) *Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V (Max.)@ IC= 5A *Excellent Safe Operating Area *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *High voltage s.

2SD640-INCHANGE.pdf

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Datasheet Details

Part number:

2SD640

Manufacturer:

INCHANGE

File Size:

194.37 KB

Description:

Npn transistor.

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