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2SD640 NPN Transistor

2SD640 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD640 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V (Min). Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1. E.

2SD640 Applications

* High voltage switching applications.
* High power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A

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Datasheet Details

Part number
2SD640
Manufacturer
INCHANGE
File Size
194.37 KB
Datasheet
2SD640-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD640-like datasheet