Datasheet4U Logo Datasheet4U.com

2SD640 Datasheet - INCHANGE

NPN Transistor

2SD640 General Description

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V (Min) *Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V (Max.)@ IC= 5A *Excellent Safe Operating Area *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *High voltage s.

2SD640 Datasheet (194.37 KB)

Preview of 2SD640 PDF

Datasheet Details

Part number:

2SD640

Manufacturer:

INCHANGE

File Size:

194.37 KB

Description:

Npn transistor.

📁 Related Datasheet

2SD640 Silicon NPN Transistor (Toshiba)

2SD641 Silicon NPN Transistor (Toshiba)

2SD641 SILICON POWER TRANSISTOR (SavantIC)

2SD641 NPN Transistor (INCHANGE)

2SD642 Silicon NPN Transistor (ETC)

2SD647A Silicon NPN Transistor (Toshiba)

2SD648A Silicon NPN Transistor (Toshiba)

2SD649 Silicon NPN Power Transistor (Inchange Semiconductor)

2SD60 NPN Transistor (INCHANGE)

2SD600 PNP/NPN Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)

TAGS

2SD640 NPN Transistor INCHANGE

Image Gallery

2SD640 Datasheet Preview Page 2 2SD640 Datasheet Preview Page 3

2SD640 Distributor