2SD641 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V (Min). Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.

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Datasheet Specifications

Part number: 2SD641
Manufacturer: INCHANGE
File Size: 201.29 KB
Datasheet: 2SD641-INCHANGE.pdf
Description: NPN Transistor

Applications

* High voltage switching applications.
* High power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A

2SD641 Distributors

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2SD641 NPN Transistor INCHANGE

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