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2SD641 Datasheet - INCHANGE

2SD641 NPN Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V (Min) *Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V (Max.)@ IC= 10A *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *High voltage switching applications. *High p.

2SD641-INCHANGE.pdf

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Datasheet Details

Part number:

2SD641

Manufacturer:

INCHANGE

File Size:

201.29 KB

Description:

Npn transistor.

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