2SD895 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor 2SD895 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 85V(Min). Good Linearity of hFE. High Current Capability. Wide Area of Safe Operatio.

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Datasheet Specifications

Part number: 2SD895
Manufacturer: INCHANGE
File Size: 214.00 KB
Datasheet: 2SD895-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for 35W audio frequency output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 85 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 6 A ICP Collector Current-

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2SD895 NPN Transistor INCHANGE

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