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3DD15D Datasheet - INCHANGE

3DD15D NPN Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min.) *DC Current Gain- : hFE= 30~250(Min.)@IC= 2A *Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 2.5A *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Desi.

3DD15D-INCHANGE.pdf

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Datasheet Details

Part number:

3DD15D

Manufacturer:

INCHANGE

File Size:

202.12 KB

Description:

Npn transistor.

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3DD15D 3DD15D NPN Transistor INCHANGE

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