3DD15D NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor 3DD15D .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min. DC Current Gain- : hFE= 30~250(Min. Collector-Emitter Saturation Vo.

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Datasheet Specifications

Part number: 3DD15D
Manufacturer: INCHANGE
File Size: 202.12 KB
Datasheet: 3DD15D-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for B&W TV horizontal output , regulated power supply and power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 5 V IC Collector Curr

3DD15D Distributors

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3DD15D NPN Transistor INCHANGE

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