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BD250C, BD250 PNP Transistor

BD250C Description

isc Silicon PNP Power Transistor .
Collector Current -IC= -25A. Collector-Emitter Breakdown Voltage- : V(BR)CEO = -45V(Min)- BD250; -60V(Min)- BD250A -80V(Min)- BD250B; -100V(M.

BD250C Applications

* Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BD250 -55 VCER Collector-Emitter Voltage (RBE= 100Ω) BD250A BD250B -70 -90 BD250C -115 BD250 -45 VCEO Collector-Emitter Voltage BD250A -60 BD2

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This datasheet PDF includes multiple part numbers: BD250C, BD250. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
BD250C, BD250
Manufacturer
INCHANGE
File Size
213.20 KB
Datasheet
BD250-INCHANGE.pdf
Description
PNP Transistor
Note
This datasheet PDF includes multiple part numbers: BD250C, BD250.
Please refer to the document for exact specifications by model.

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PNP Transistor INCHANGE
INCHANGE BD250C-like datasheet