BD679 Datasheet - INCHANGE

BD679, NPN Transistor

isc Silicon NPN Darlington Power Transistor DESCRIPTION *Collector *Emitter Breakdown Voltage * : V(BR)CEO = 80V *DC Current Ga

Applications

* Designed for use as output devices in complementary general-purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Con

BD679-INCHANGE.pdf