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BD843 NPN Transistor

BD843 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor BD843 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min). High DC Current Gain. Low Saturation Voltage. Complement to Type BD844.

BD843 Applications

* Designed for use in television circuits and audio applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A ICP Collec

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Datasheet Details

Part number
BD843
Manufacturer
INCHANGE
File Size
207.65 KB
Datasheet
BD843-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE BD843-like datasheet