Datasheet4U Logo Datasheet4U.com

BD951 NPN Transistor

BD951 Description

isc Silicon NPN Power Transistor BD951 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min). DC Current Gain- : hFE= 40(Min)@ IC= 500mA. Complement to Type BD952. Mini.

BD951 Applications

* Designed for power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Curren

📥 Download Datasheet

Preview of BD951 PDF
datasheet Preview Page 2

Datasheet Details

Part number
BD951
Manufacturer
INCHANGE
File Size
206.58 KB
Datasheet
BD951-INCHANGE.pdf
Description
NPN Transistor

📁 Related Datasheet

  • BD951F - Silicon NPN Power Transistor (Inchange Semiconductor)
  • BD950 - Silicon PNP Power Transistor (Inchange Semiconductor)
  • BD950F - Silicon PNP Power Transistor (Inchange Semiconductor)
  • BD952 - PNP PLASTIC POWER TRANSISTOR (CDIL)
  • BD95242MUV - 2ch Switching Regulator (Rohm)
  • BD9524MUV - Main Power Supply IC (Rohm)
  • BD9526AMUV - Silicon Monolithic Integrated Circuit (Rohm)
  • BD9528AMUV - PCs Main Power Supply (Rohm)

📌 All Tags

NPN Transistor INCHANGE
INCHANGE BD951-like datasheet