BD950 Datasheet - Inchange Semiconductor

BD950, Silicon PNP Power Transistor

isc Silicon PNP Power Transistor BD950 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min). DC Current Gain- : hFE= 40(Min)@ IC= -500mA. Complement to Type BD949. Mi.

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Datasheet Details

Part number:

BD950

Manufacturer:

Inchange Semiconductor

File Size:

213.08 KB

Description:

Silicon PNP Power Transistor

Applications

* Designed for power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A ICM Collector Cu

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