Datasheet Details
- Part number
- BD950
- Manufacturer
- Inchange Semiconductor
- File Size
- 213.08 KB
- Datasheet
- BD950-InchangeSemiconductor.pdf
- Description
- Silicon PNP Power Transistor
BD950 Description
isc Silicon PNP Power Transistor BD950 .
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min).
DC Current Gain-
: hFE= 40(Min)@ IC= -500mA.
Complement to Type BD949.
Mi.
BD950 Applications
* Designed for power amplifier and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-5
A
ICM
Collector Cu
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