BD950 Datasheet, Transistor, Inchange Semiconductor

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BD950

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Inchange Semiconductor

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📄 Datasheet

Description:

Silicon pnp power transistor.

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min)

DC Current Gain- : hFE= 40(Min)@ IC= -500mA

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BD950 Application

• Applications
• Designed for power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCB

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BD950

Inchange Semiconductor

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