BD950 Silicon PNP Power Transistor

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor BD950 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min). DC Current Gain- : hFE= 40(Min)@ IC= -500mA. Complement to Type BD949. Mi.

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Datasheet Specifications

Part number: BD950
Manufacturer: Inchange Semiconductor
File Size: 213.08 KB
Datasheet: BD950-InchangeSemiconductor.pdf
Description: Silicon PNP Power Transistor

Applications

* Designed for power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A ICM Collector Cu

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BD950 Silicon PNP Power Transistor Inchange Semiconductor

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