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BD950 Datasheet - Inchange Semiconductor

BD950 Silicon PNP Power Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) *DC Current Gain- : hFE= 40(Min)@ IC= -500mA *Complement to Type BD949 *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for power amplifier and switching applicat.

BD950-InchangeSemiconductor.pdf

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Datasheet Details

Part number:

BD950

Manufacturer:

Inchange Semiconductor

File Size:

213.08 KB

Description:

Silicon pnp power transistor.

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BD950 BD950 Silicon PNP Power Transistor Inchange Semiconductor

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