Datasheet4U Logo Datasheet4U.com

BDW47 - PNP Transistor

📥 Download Datasheet

Preview of BDW47 PDF
datasheet Preview Page 2

Datasheet Details

Part number BDW47
Manufacturer INCHANGE
File Size 209.06 KB
Description PNP Transistor
Datasheet download datasheet BDW47-INCHANGE.pdf

BDW47 Product details

Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -100V(Min) High DC Current Gain : hFE= 1000(Min) @IC= -5A Low Collector Saturation Voltage : VCE(sat)= -2.0V(Max.)@ IC= -5.0A = -3.0V(Max.)@ IC= -10A Complement to Type BDW42 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose and low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collecto

📁 BDW47 Similar Datasheet

  • BDW47G - Darlington Complementary Silicon Power Transistors (ON Semiconductor)
  • BDW42G - Darlington Complementary Silicon Power Transistors (ON Semiconductor)
  • BDW46 - DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS (ON Semiconductor)
  • BDW46G - Darlington Complementary Silicon Power Transistors (ON Semiconductor)
  • BDW48 - (BDW39 - BDW48) DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS (Motorola)
  • BDW21 - Bipolar NPN Device (Seme LAB)
  • BDW21C - Bipolar NPN Device (Seme LAB)
  • BDW22 - Bipolar PNP Device (Seme LAB)
Other Datasheets by INCHANGE
Published: |