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BDW53 NPN Transistor

BDW53 Description

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor BDW53 .
High DC Current Gain : hFE= 750(Min. High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 45V(Min). Low Collector.

BDW53 Applications

* Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC IB PC Tj Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current- Conti

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Datasheet Details

Part number
BDW53
Manufacturer
INCHANGE
File Size
198.28 KB
Datasheet
BDW53-INCHANGE.pdf
Description
NPN Transistor

📁 Related Datasheet

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  • BDW51B - Bipolar NPN Device (Seme LAB)
  • BDW51C - Bipolar NPN Device (Seme LAB)
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NPN Transistor INCHANGE
INCHANGE BDW53-like datasheet