BDW53 NPN Transistor

INCHANGE

Description

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor BDW53 .
High DC Current Gain : hFE= 750(Min. High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 45V(Min). Low Collector.

📥 Download Datasheet

BDW53 Datasheet Preview — Preview of BDW53 PDF

Datasheet Specifications

Part number: BDW53
Manufacturer: INCHANGE
File Size: 198.28 KB
Datasheet: BDW53-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC IB PC Tj Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current- Conti

BDW53 Distributors

📁 Related Datasheet

BDW53A BDW53B BDW53C BDW53D BDW51A BDW51B

📌 All Tags

BDW53 NPN Transistor INCHANGE

INCHANGE BDW53-like datasheet