BDW54
INCHANGE
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Pnp transistor. *High DC Current Gain : hFE= 750(Min.)@ IC= -1.5A, VCE= -3V *High Collector-Emitter Breakdown Voltage- : V(BR)CEO = -45V(Min) *Low Co
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BDW51 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
BDW51/A/B/C
DESCRIPTION ·Collector Current -IC= 15A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 45V(Min)- .
BDW51A - Bipolar NPN Device
(Seme LAB)
BDW51A
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN.
BDW51A - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
BDW51/A/B/C
DESCRIPTION ·Collector Current -IC= 15A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 45V(Min)- .
BDW51B - Bipolar NPN Device
(Seme LAB)
BDW51B
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN.
BDW51B - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
BDW51/A/B/C
DESCRIPTION ·Collector Current -IC= 15A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 45V(Min)- .
BDW51C - Bipolar NPN Device
(Seme LAB)
BDW51C
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN.
BDW51C - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BDW51C
..
DESCRIPTION ·With TO-3 package ·Complement .
BDW51C - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
BDW51/A/B/C
DESCRIPTION ·Collector Current -IC= 15A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 45V(Min)- .
BDW52 - Bipolar PNP Device
(Seme LAB)
BDW52
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar PNP .
BDW52 - Silicon PNP Power Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
BDW52/A/B/C
DESCRIPTION ·Collector Current -IC= -15A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -45V(Min).