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BDW54 PNP Transistor

BDW54 Description

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor BDW54 .
High DC Current Gain : hFE= 750(Min. High Collector-Emitter Breakdown Voltage- : V(BR)CEO = -45V(Min). Low Collect.

BDW54 Applications

* Designed for general-purpose amplifier and low-speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -45 VCEO Collector-Emitter Voltage -45 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -4 IB Base Curre

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Datasheet Details

Part number
BDW54
Manufacturer
INCHANGE
File Size
197.92 KB
Datasheet
BDW54-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE BDW54-like datasheet