BUY30 Datasheet, Transistor, INCHANGE

PDF File Details

Part number:

BUY30

Manufacturer:

INCHANGE

File Size:

201.33kb

Download:

📄 Datasheet

Description:

Npn transistor.

Collector-Emitter Breakdown Voltage- :V(BR)CEO= 250V(Min.)

Excellent Safe Operating Area

High Speed Switch

BUY30 Application

• Applications
• Designed for use in switching-control amplifiers, power gates,switching regulators, converters, and inverter. ABSOLUTE MAXIMU

TAGS

BUY30

INCHANGE

📁 Related Datasheet

BUY30 - Bipolar NPN Device (Seme LAB)
.DataSheet.co.kr BUY30 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15.

BUY34D - T-1 (3mm) BLINKING LED LAMP (SunLED Corporation)
.DataSheet.co.kr Part Number: .SunLED. BUY34D T-1 (3mm) BLINKING LED LAMP Features T-1 PACKAGE WITH RECTANGULAR BASE. WITH BUILT-IN BLIN.

BUY39 - Bipolar NPN Device (Seme LAB)
.DataSheet.co.kr BUY39 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15.

BUY06CS23K-01 - 60V Radiation Hard power MOSFET (Infineon)
BUY06CS23K-01 60V Radiation Hard power MOSFET BUY06CS23K-01(ES) Features  Low RDS(on)  Single Event Effect (SEE) hardened LET 95, Range: 86µm (.

BUY12 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- :V(BR)CEO= 80V(Min.) ·High Speed Switching ·Minimum Lot-to-Lot var.

BUY15CS23K-01 - 150V Radiation Hard power MOSFET (Infineon)
BUY15CS23K-01 150V Radiation Hard power MOSFET BUY15CS23K-01(ES) Features  Low RDS(on)  Single Event Effect (SEE) hardened LET 73, Range: 253µm.

BUY18S - Bipolar NPN Device (Seme LAB)
BUY18S Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN.

BUY18S - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor BUY18S DESCRIPTION · ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(MIN) ·Low Collector Saturation Volt.

BUY20 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor BUY20 DESCRIPTION ·Collector-Emitter Breakdown Voltage- :V(BR)CEO= 120V(Min.) ·Excellent Safe Operating Area ·High .

BUY21 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor BUY21 DESCRIPTION ·Collector-Emitter Breakdown Voltage- :V(BR)CEO= 180V(Min.) ·Excellent Safe Operating Area ·High .