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BUZ31H3046 - N-Channel MOSFET

BUZ31H3046 Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor BUZ31H3046 *.

BUZ31H3046 Features

* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

BUZ31H3046 Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 14.5 A IDM Drain Current-Single Pulsed 58 A PD Total Dissipation @TC=25℃ 95 W Tj Max. Operating Junction Temperature

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Datasheet Details

Part number
BUZ31H3046
Manufacturer
INCHANGE
File Size
231.15 KB
Datasheet
BUZ31H3046-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE BUZ31H3046-like datasheet