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BUZ30AH - N-Channel MOSFET

BUZ30AH Description

isc N-Channel MOSFET Transistor BUZ30AH,IBUZ30AH *.

BUZ30AH Features

* Static drain-source on-resistance: RDS(on) ≤130mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* High current,high speed switching
* ABSOLUTE MAXIMUM RAT

BUZ30AH Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

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Datasheet Details

Part number
BUZ30AH
Manufacturer
INCHANGE
File Size
240.72 KB
Datasheet
BUZ30AH-INCHANGE.pdf
Description
N-Channel MOSFET

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