IPB200N25N3G N-Channel MOSFET

INCHANGE

IPB200N25N3G Description

Isc N-Channel MOSFET Transistor *.

IPB200N25N3G Features

* With TO-263( D²PAK ) packaging
* High speed switching
* Low gate input resistance
* Standard level gate drive
* Easy to use
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

IPB200N25N3G Applications

* Power supply
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 250 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 64 PD Total Dissipation @TC=25℃ 300 Tj Max. Operating Junction Temperature -55~175 Tstg

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IPB200N25N3G Datasheet Preview — Preview of IPB200N25N3G PDF

Datasheet Details

Part number: IPB200N25N3G
Manufacturer: INCHANGE
File Size: 224.42 KB
Datasheet: IPB200N25N3G-INCHANGE.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET INCHANGE

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