IPD082N10N3, Infineon
.DataSheet.co.kr
IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G
OptiMOS™3 Power-Transistor
Features • N-channel, normal level • Excellen.
IPD082N10N3G, Infineon Technologies
.DataSheet.co.kr
IPP086N10N3 G IPB083N10N3 G
IPI086N10N3 G IPD082N10N3 G
OptiMOS™3 Power-Transistor
Features • N-channel, normal level • Excelle.
IPD088N04LG, Infineon Technologies
.DataSheet.co.kr
Type
IPD088N04L G
OptiMOS®3 Power-Transistor
Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC convert.
IPD025N06N, Infineon
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
OptiMOSTM
OptiMOSTM Power-Transistor, 60 V IPD025N06N
Data Sheet
Rev. 2.5 Final
Power Managem.