IPD082N10N3 N-Channel MOSFET

INCHANGE

Description

isc N-Channel MOSFET Transistor IPD082N10N3,IIPD082N10N3 *.

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Datasheet Specifications

Part number: IPD082N10N3
Manufacturer: INCHANGE
File Size: 238.45 KB
Datasheet: IPD082N10N3-INCHANGE.pdf
Description: N-Channel MOSFET

Features

* Static drain-source on-resistance: RDS(on)≤8.2mΩ
* Enhancement mode:
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Ideal for high-frequency switching and synchronous rectification
* ABSOLUTE MAXIMU

Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

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IPD082N10N3 N-Channel MOSFET INCHANGE

INCHANGE IPD082N10N3-like datasheet