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IPD082N10N3 - N-Channel MOSFET

INCHANGE

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Datasheet Details

Part number	IPD082N10N3
Manufacturer	INCHANGE
File Size	238.45 KB
Description	N-Channel MOSFET
Datasheet	IPD082N10N3-INCHANGE.pdf

IPD082N10N3 Product details

Features

Static drain-source on-resistance: RDS(on)≤8.2mΩ.
Enhancement mode:.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Oct 8, 2020 |