IPD082N10N3G Datasheet - Infineon Technologies

IPD082N10N3G Power-Transistor

IPD082N10N3G Features

* N-channel, normal level

* Excellent gate charge x R DS(on) product (FOM)

* Very low on-resistance R DS(on)

* 175 °C operating temperature

* Pb-free lead plating; RoHS compliant

* Qualified according to JEDEC1) for target application Product Summary

Datasheet Details

IPD082N10N3G

Infineon ↗ Technologies

542.90 KB

Power-transistor.

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