Part number:
IPD082N10N3G
Manufacturer:
Infineon ↗ Technologies
File Size:
542.90 KB
Description:
Power-transistor.
IPD082N10N3G_InfineonTechnologies.pdf
Datasheet Details
IPD082N10N3G Features
* N-channel, normal level
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance R DS(on)
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant
* Qualified according to JEDEC1) for target application Product Summary
IPD082N10N3G_InfineonTechnologies.pdf
Datasheet Details
IPD082N10N3G
Infineon ↗ Technologies
542.90 KB
Power-transistor.
IPD082N10N3G Distributor
📁 Related Datasheet
IPD082N10N3 Power-Transistor (Infineon)
IPD082N10N3 N-Channel MOSFET (INCHANGE)
IPD088N04LG Power-Transistor (Infineon Technologies)
IPD088N06N3 N-Channel MOSFET (INCHANGE)
IPD088N06N3 Power-Transistor (Infineon)
IPD088N06N3G Power-Transistor (Infineon Technologies)
IPD088N06N3G N-Channel MOSFET (INCHANGE)
IPD023N04NF2S 40V MOSFET (Infineon)