IPD082N10N3G Datasheet, Power-transistor, Infineon Technologies

IPD082N10N3G Features

• Power-transistor
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• 175 °C operating temperature
• Pb-

PDF File Details

Part number:

IPD082N10N3G

Manufacturer:

Infineon ↗ Technologies

File Size:

542.90kb

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📄 Datasheet

Description:

Power-transistor.

TAGS

IPD082N10N3G

Infineon Technologies

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