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IPD082N10N3G - Power-Transistor

Infineon Technologies

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Datasheet Details

Part number	IPD082N10N3G
Manufacturer	Infineon ↗ Technologies
File Size	542.90 KB
Description	Power-Transistor
Datasheet	IPD082N10N3G_InfineonTechnologies.pdf

IPD082N10N3G Product details

Features

N-channel, normal level.
Excellent gate charge x R DS(on) product (FOM).
Very low on-resistance R DS(on).
175 °C operating temperature.
Pb-free lead plating; RoHS compliant.
Qualified according to JEDEC1) for target.

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Published: Feb 20, 2012 |