Datasheet4U Logo Datasheet4U.com

IPD082N10N3G

Power-Transistor

IPD082N10N3G Features

* N-channel, normal level

* Excellent gate charge x R DS(on) product (FOM)

* Very low on-resistance R DS(on)

* 175 °C operating temperature

* Pb-free lead plating; RoHS compliant

* Qualified according to JEDEC1) for target application Product Summary

IPD082N10N3G Datasheet (542.90 KB)

Preview of IPD082N10N3G PDF

Datasheet Details

Part number:

IPD082N10N3G

Manufacturer:

Infineon ↗ Technologies

File Size:

542.90 KB

Description:

Power-transistor.

📁 Related Datasheet

IPD082N10N3 Power-Transistor (Infineon)

IPD082N10N3 N-Channel MOSFET (INCHANGE)

IPD088N04LG Power-Transistor (Infineon Technologies)

IPD088N06N3 N-Channel MOSFET (INCHANGE)

IPD088N06N3 Power-Transistor (Infineon)

IPD088N06N3G Power-Transistor (Infineon Technologies)

IPD088N06N3G N-Channel MOSFET (INCHANGE)

IPD025N06N MOSFET (Infineon)

IPD025N06N N-Channel MOSFET (INCHANGE)

IPD029N04NF2S MOSFET (Infineon)

TAGS

IPD082N10N3G Power-Transistor Infineon Technologies

Image Gallery

IPD082N10N3G Datasheet Preview Page 2 IPD082N10N3G Datasheet Preview Page 3

IPD082N10N3G Distributor