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IPD082N10N3, IPD082N10N3G Power-Transistor

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Description

www.DataSheet.co.kr IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G OptiMOS™3 Power-Transistor .

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This datasheet PDF includes multiple part numbers: IPD082N10N3, IPD082N10N3G. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
IPD082N10N3, IPD082N10N3G
Manufacturer
Infineon ↗
File Size
542.90 KB
Datasheet
IPD082N10N3G_InfineonTechnologies.pdf
Description
Power-Transistor
Note
This datasheet PDF includes multiple part numbers: IPD082N10N3, IPD082N10N3G.
Please refer to the document for exact specifications by model.

Features

* N-channel, normal level
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance R DS(on) Product Summary V DS R DS(on),max (TO 252) ID 100 V 8.2 mΩ 80 A
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant
* Qua

IPD082N10N3 Distributors

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