IPD082N10N3 - Power-Transistor
IPD082N10N3 Features
* N-channel, normal level
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance R DS(on) Product Summary V DS R DS(on),max (TO 252) ID 100 V 8.2 mΩ 80 A
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant
* Qua
