IPD088N06N3G Datasheet, Power-transistor, Infineon Technologies

PDF File Details

Part number:

IPD088N06N3G

Manufacturer:

Infineon ↗ Technologies

File Size:

609.06kb

Download:

📄 Datasheet

Description:

Power-transistor.

TAGS

IPD088N06N3G

Infineon Technologies

📁 Related Datasheet

IPD088N06N3 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD088N06N3,IIPD088N06N3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤8.8mΩ ·Enhancement mode: ·100% avalanc.

IPD088N06N3 - Power-Transistor (Infineon)
Ie\Q #        %&$ # B<  # : A 0<& <,9=4=>: < 6LHZ[XLY Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3 B53 Q( @D9=9J54 D53 8>?

IPD088N06N3G - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPD088N06N3G ·FEATURES ·With TO-252(DPAK) packaging ·With low gate drive requirements ·Very h.

IPD088N04LG - Power-Transistor (Infineon Technologies)
.DataSheet.co.kr Type IPD088N04L G OptiMOS®3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC convert.

IPD082N10N3 - Power-Transistor (Infineon)
.DataSheet.co.kr IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellen.

IPD082N10N3 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD082N10N3,IIPD082N10N3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤8.2mΩ ·Enhancement mode: ·100% avalanc.

IPD082N10N3G - Power-Transistor (Infineon Technologies)
.DataSheet.co.kr IPP086N10N3 G IPB083N10N3 G IPI086N10N3 G IPD082N10N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excelle.

IPD025N06N - MOSFET (Infineon)
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM Power-Transistor, 60 V IPD025N06N Data Sheet Rev. 2.5 Final Power Managem.

IPD025N06N - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD025N06N, IIPD025N06N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤2.5mΩ ·Enhancement mode: ·100% avalanch.

IPD029N04NF2S - MOSFET (Infineon)
IPD029N04NF2S MOSFET StrongIRFETTM2 Power-Transistor Features • Optimized for wide range of applications • N-channel, normal level • 100% avalanche t.