IPD088N06N3G N-Channel MOSFET

INCHANGE

Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPD088N06N3G *.

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Datasheet Specifications

Part number: IPD088N06N3G
Manufacturer: INCHANGE
File Size: 205.98 KB
Datasheet: IPD088N06N3G-INCHANGE.pdf
Description: N-Channel MOSFET

Features

* With TO-252(DPAK) packaging
* With low gate drive requirements
* Very high commutation ruggedness
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switching applications
* LCD&PDP TV
* PC silverbox
* UPS and solar
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±20 50 47 200 PD

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IPD088N06N3G N-Channel MOSFET INCHANGE

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