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IPD65R1K4C6 - N-Channel MOSFET

INCHANGE

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Datasheet Details

Part number	IPD65R1K4C6
Manufacturer	INCHANGE
File Size	238.60 KB
Description	N-Channel MOSFET
Datasheet	IPD65R1K4C6-INCHANGE.pdf

IPD65R1K4C6 Product details

Features

Static drain-source on-resistance: RDS(on)≤1.4Ω.
Enhancement mode:.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Oct 8, 2020 |