Part number:
IPD80R2K8CE
Manufacturer:
INCHANGE
File Size:
238.67 KB
Description:
N-channel mosfet.
IPD80R2K8CE Datasheet (238.67 KB)
* Static drain-source on-resistance: RDS(on)≤2.8Ω
* Enhancement mode:
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* High peak current capability
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER
IPD80R2K8CE Datasheet (238.67 KB)
IPD80R2K8CE
INCHANGE
238.67 KB
N-channel mosfet.
📁 Related Datasheet
IPD80R2K8CE - MOSFET
(Infineon)
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS™ CE
800V CoolMOS™ CE Power Transistor IPx80R2K8CE
Data Sheet
Rev. 2.3 Final
Power Man.
IPD80R2K0P7 - Power-Transistor
(Infineon)
IPD80R2K0P7
MOSFET
800V CoolMOSª P7 Power Transistor
The latest 800V CoolMOS™ P7 series sets a new benchmark in 800V super junction technologies and .
IPD80R2K4P7 - Power-Transistor
(Infineon)
IPD80R2K4P7
MOSFET
800V CoolMOSª P7 Power Transistor
The latest 800V CoolMOS™ P7 series sets a new benchmark in 800V super junction technologies and .
IPD80R280P7 - MOSFET
(Infineon)
IPD80R280P7
MOSFET
800V CoolMOSª P7 Power Transistor
The latest 800V CoolMOS™ P7 series sets a new benchmark in 800V super junction technologies and .
IPD80R1K0CE - MOSFET
(Infineon)
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS™ CE
800V CoolMOS™ CE Power Transistor IPx80R1K0CE
Data Sheet
Rev. 2.2 Final
Power Man.
IPD80R1K0CE - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IPD80R1K0CE,IIPD80R1K0CE
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.95Ω ·Enhancement mode: ·100% avalan.
IPD80R1K2P7 - Power-Transistor
(Infineon)
IPD80R1K2P7
MOSFET
800V CoolMOSª P7 Power Transistor
The latest 800V CoolMOS™ P7 series sets a new benchmark in 800V super junction technologies and .
IPD80R1K4CE - MOSFET
(Infineon)
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS™ CE
800V CoolMOS™ CE Power Transistor IPx80R1K4CE
Data Sheet
Rev. 2.3 Final
Power Man.
