Datasheet Details
- Part number
- IPD80R2K8CE
- Manufacturer
- INCHANGE
- File Size
- 238.67 KB
- Datasheet
- IPD80R2K8CE-INCHANGE.pdf
- Description
- N-Channel MOSFET
IPD80R2K8CE Description
isc N-Channel MOSFET Transistor IPD80R2K8CE,IIPD80R2K8CE *.
IPD80R2K8CE Features
* Static drain-source on-resistance:
RDS(on)≤2.8Ω
* Enhancement mode:
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device
performance and reliable operation
* DESCRITION
* High peak current capability
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
IPD80R2K8CE Applications
* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field
📁 Related Datasheet
📌 All Tags
IPD80R2K8CE Stock/Price