Datasheet Details
- Part number
- IPD80R1K4CE
- Manufacturer
- Infineon ↗
- File Size
- 1.17 MB
- Datasheet
- IPD80R1K4CE-Infineon.pdf
- Description
- MOSFET
IPD80R1K4CE Description
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ CE 800V CoolMOS™ CE Power Transistor IPx80R1K4CE Data Sheet Rev.2.3 Final Power Man.
CoolMOS™ CE is a revolutionary technology for high voltage power MOSFETs.
IPD80R1K4CE Features
* High voltage technology
* Extreme dv/dt rated
* High peak current capability
* Low gate charge
* Low effective capacitances
* Qualified according to JEDEC Standard
* Pb-free lead plating; RoHS compliant; halogen free mold compound
DPAK
tab
IPD80R1K4CE Applications
* LED Lighting for retrofit applications in QR Flyback topology
Table 1 Key Performance Parameters
Parameter VDS @ Tj=25°C RDS(on),max Qg,typ ID,pulse VGS(th),typ CO(tr),typ
Value 800 1.4 23 12 3 51
Unit V Ω nC A V pF
Type / Ordering Code IPD80R1K4CE IPU80R1K4CE
Package PG-TO 252 P
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