Part number:
IPI100N08N3
Manufacturer:
INCHANGE
File Size:
283.00 KB
Description:
N-channel mosfet.
IPI100N08N3 Datasheet (283.00 KB)
* Static drain-source on-resistance: RDS(on) ≤9.7mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* reliable device for use in a wide variety of applications
IPI100N08N3 Datasheet (283.00 KB)
IPI100N08N3
INCHANGE
283.00 KB
N-channel mosfet.
📁 Related Datasheet
IPI100N08N3 - Power-Transistor
(Infineon)
%&$ #™3 Power-Transistor
Features Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3
B53
Q( @D9=9J54 D53 8>? F5BD5BC Q H3 5<.
IPI100N08N3G - Power-Transistor
(Infineon)
%&$ #™3 Power-Transistor
Features Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3
B53
Q( @D9=9J54 D53 8>? F5BD5BC Q H3 5<.
IPI100N08S2-07 - Power-Transistor
(Infineon Technologies)
..
IPB100N08S2-07 IPP100N08S2-07, IPI100N08S2-07
OptiMOS® Power-Transistor
Features • N-channel - Enhancement mode • Automotive AEC.
IPI100N04S3-03 - OptiMOS-T Power-Transistor
(Infineon Technologies)
..net
IPB100N04S3-03 IPI100N04S3-03, IPP100N04S3-03
OptiMOS®-T Power-Transistor
Product Summary V DS R DS(on) (SMD Version) ID 40 2.5.
IPI100N04S4-H2 - OptiMOS-T2 Power-Transistor
(Infineon Technologies)
OptiMOS®-T2 Power-Transistor
Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Gr.
IPI100N06S3-03 - Power-Transistor
(Infineon Technologies)
..
IPB100N06S3-03 IPI100N06S3-03, IPP100N06S3-03
OptiMOS®-T Power-Transistor
Features • N-channel - Enhancement mode • Automotive A.
IPI100N06S3L-03 - Power-Transistor
(Infineon Technologies)
..
IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03
OptiMOS®-T Power-Transistor
Features • N-channel - Logic Level - Enhancement mo.
IPI100N10S3-05 - Power-Transistor
(Infineon Technologies)
OptiMOS®-T Power-Transistor
Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating t.
